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SMP100LC-200 Datasheet(PDF) 3 Page - STMicroelectronics

No. de pieza SMP100LC-200
Descripción Electrónicos  TRISILTM FOR HIGH DEBIT RATE TELECOM LINES PROTECTION
PDF  8 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

SMP100LC-200 Datasheet(HTML) 3 Page - STMicroelectronics

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SMP100LC-xxx
3/8
Type
IRM @VRM
max.
IR @VR
max.
Note 1
VBO @IBO
max.
Note 2
IH
min.
Note 3
C
typ.
Note 4
µAV
µAV
V
mA
mA
pF
SMP100LC-140
2
120
50
140
185
800
150
30
SMP100LC-200
2
170
50
200
265
800
150
30
SMP100LC-270
2
230
50
262
350
800
150
30
Note 1:
IR measured at VR guarantee VBR >VR
Note 2:
VRISE = 100V/µS, di/dt < 10 A/µs, IPP = 100A
VRISE = 1kV/µS, di/dt < 10 A/µs, IPP = 10A
VBO parameters are given by a KeyTek ”System 2” generator with PN2461 module.
See test circuits 3 for VBO dynamic parameters
Note 3:
See functional holding current test circuit 1
Note 4:
VR=50V bias, VRMS=1V, F=1MHz.
DYNAMIC PARAMETERS
Symbol
Parameter
VRM
Stand-off voltage
IRM
Leakage current at VRM
VR
Continuous reverse voltage
IR
Leakage current
VBR
Breakdown voltage
VBO
Breakover voltage
IH
Holding current
IBO
Breakover current
IPP
Peak pulse current
C
Capacitance
ELECTRICAL CHARACTERISTICS (Tamb =25
°C)
100
50
%IPP
t
t
rp
0
t
Pulse waveform:
10 / 1000
µstr = 10 µs
tp = 1000
µs
8/ 20
µstr = 8 µstp = 20 µs
5 / 310
µstr = 5 µs
tp = 310
µs
1/ 20
µstr = 1 µstp = 20 µs
2/ 10
µstr = 2 µstp = 10 µs



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