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C6D08065A Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza C6D08065A
Descripción Electrónicos  SiC Schottky Diode
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

C6D08065A Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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ISCD7105
eq C6D08065A
SiC Schottky Diode
www.iscsemi.com
1
FEATURES
· High surge current capability
· Positive Temperature Coefficient
APPLICATIONS
· Solar Inverters
· Boost for PFC & DC-DC Stages
· Industrial Switched Mode Power Supplies
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VRRM
Repetitive Peak Reverse Voltage
650
V
IF(AV)
Continuous Forward Current, TC=155°C
8
A
IFSM
Non-Repetitive Forward Surge Current, Tc=25°C,tp=10ms, Half Sine Wave
69
A
TJ
Max. Junction Temperature
175
℃
Tstg
Storage Temperature Range
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
TYP
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.62
℃
/W
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
VF
Diode Forward Voltage
IF= 8A, TJ= 25℃
--
--
1.5
V
IR
Reverse current
VR= 650V, TJ= 25℃
--
--
40
µA
K
K
A


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