SD56120 datasheet(1/4 Pages) STMICROELECTRONICS

No. de pieza	SD56120

Descripción Electrónicos	RF POWER TRANSISTORS RF POWER TRANSISTORS

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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SD56120

RF POWER TRANSISTORS

The

LdmoST FAMILY

TARGET DATA

N-CHANNEL ENHANCEMENT-MODE LATERAL

MOSFETs

s

EXCELLENT THERMAL STABILITY

s

COMMON SOURCE CONFIGURATION,

PUSH-PULL

s

POUT = 100 W PEP WITH 13 dB GAIN @ 860

MHz

s

BeO FREE PACKAGE

DESCRIPTION

The SD56120 is a common source N-Channel

enhancement-mode lateral Field-Effect RF power

transistor designed for broadband commercial

and industrial applications at frequencies up to

1.0 GHz. The SD56120 is designed for high gain

and

broadband

performance

operating

in

common source mode at 28V. It is ideal for

broadcast applications from 470 to 860 MHz

requiring high linearity.

PIN CONNECTION

November 1999

ABSOLUTE MAXIMUM RATINGS (Tcase = 25

oC)

Symbol

Parameter

Value

Unit

V(BR)DSS

Drain Source Voltage

65

V

VGS

Gate-Source Voltage

± 20

V

ID

Drain Current

14

A

PDISS

Power Dissipation (@ Tc= 70

o C)

260

W

Tj

Max. Operating Junction Temperature

200

oC

TSTG

Storage Temperature

-65 to 150

oC

THERMAL DATA

Rth(j-c)

Junction-Case Thermal Resistance

0.5

oC/W

M246

epoxy sealed

®

ORDER CODE

BRANDING

SD56120

XSD56120

1. Drain

4. Gate

2. Drain

5. Gate

3. Source

1/4

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