SD4017 datasheet(1/7 Pages) STMICROELECTRONICS

No. de pieza	SD4017

Descripción Electrónicos	RF & MICROWAVE TRANSISTORS 806-960 MHz CELLULAR BASE STATIONS

PDF	7 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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July 19, 1994

806-960 MHz CELLULAR BASE STATIONS

RF & MICROWAVE TRANSISTORS

.230 6LFL (M142)

epoxy sealed

.

GOLD METALLIZATION

.

DIFFUSED EMITTER BALLASTING

.

INTERNAL INPUT MATCHING

.

DESIGNED FOR LINEAR OPERATION

.

HIGH SATURATED POWER CAPABILITY

.

COMMON EMITTER CONFIGURATION

.

POUT

= 30 W MIN. WITH 7.5 dB GAIN

.η

C

= 55% TYPICAL

.

TYPICAL LOAD MISMATCH CAPABILITY:

20:1 ALL ANGLES RATED CONDITIONS

10:1 ALL ANGLES @

± 20% RATED

VOLTAGE

.

TYPICAL OVERDRIVE SURVIVABILITY

5dB

DESCRIPTION

The SD4017 is a gold metallized epitaxial silicon

NPN planar transistor using diffused emitter ballast

resistors for high linearity class AB operation for

cellular base station applications.

PIN CONNECTION

BRANDING

SD4017

ORDER CODE

SD4017

ABSOLUTE MAXIMUM RATINGS (Tcase

= 25°C)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

48

V

VCEO

Collector-Emitter Voltage

25

V

VEBO

Collector-Supply Voltage

3.5

V

PDISS

Power Dissipation

88

W

IC

Device Current

7.5

A

TJ

Junction Temperature

200

°C

TSTG

Storage Temperature

− 65 to +150

°C

RTH(j-c)

Junction-Case Thermal Resistance

2.0

°C/W

SD4017

1. Collector

3. Emitter

2. Base

THERMAL DATA

1/7

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