750 Mitchell Road, Newbury Park, California 91320

Phone: (805) 499-0335, Fax: (805) 499-8108

Email: sales@optodiode.com, Website: www.optodiode.com

HIGH-POWERGaAlAsIREMITTERS

OD-880L

.017

.100

.036

.041

45°

GLASS

DOME

1.00

MIN.

.024

.043

.143

.150

.015

.209

.220

.183

.186

.152

.156

FEATURES

• High reliability liquid-phase epitaxially grown GaAlAs

• 880nm peak emission for optimum matching with

ODD-45W photodiode

• Wide range of linear power output

• Hermetically sealed TO-46 package

• Medium emission angle for best coverage/power

density

All surfaces are gold plated. Dimensions are nominal

values in inches unless otherwise specified. Window

caps are welded to the case.

Spectral Bandwidth at 50%,

Half Intensity Beam Angle,

Capacitance, C

Rise Time

Fall Time

5

50

880

80

35

1.55

30

17

0.5

0.5

1.9

mW/sr

nm

nm

Deg

Volts

Volts

pF

sec

sec

ELECTRO-OPTICAL CHARACTERISTICS AT 25°C

PARAMETERS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

mW

18

20

Continuous Forward Current

Reverse Voltage

Lead Soldering Temperature (1/16" from case for 10sec)

190mW

100mA

3A

5V

260°C

ABSOLUTE MAXIMUM RATINGS AT 25°C CASE

1Derate per Thermal Derating Curve above 25°C

2Derate linearly above 25°C

ANODE

(CASE)

CATHODE

Storage and Operating Temperature Range

Maximum Junction Temperature

-55°C TO 100°C

100°C

400°C/W Typical

135°C/W Typical

THERMAL PARAMETERS

RoHS