isc Silicon NPN Transistor

TS1628

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 1mA, IB= 0A

100

--

--

V

V(BR)CBO

Collector-Base Breakdown Voltage

IC= 10uA, IE= 0A

120

--

--

V

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 10uA, IC= 0A

6

--

--

V

ICBO

Collector Cutoff Current

VCB= 100V, IE= 0A

--

--

1.0

uA

IEBO

Emitter Cutoff Current

VEB= 4V, IC= 0A

--

--

1.0

uA

hFE

DC Current Gain

IC= 0.5A, VCE= 5V

70

--

400

--

IC= 3A, VCE= 5V

40

--

--

--

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 2A, IB= 0.2A

--

0.4

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= 2A, IB= 0.2A

--

1.2

V

COB

Output Capacitance

IE=0,VCB=10V,f=1MHz

--

70

--

pF

fT

Current-Gain—Bandwidth Product

IC=0.5A,VCE=10V

--

45

--

MHz

HFE-1 CLASSIFICATIONS

Q

R

S

T

70-140

100-200

140-280

200-400

PRODUCT DISCLAIMER

ISC reserves the rights to make changes of the content herein the datasheet at any time without

notification. The information contained herein is presented only as a guide for the applications of our

products.

ISC products are intended for usage in general electronic equipment. The products are not designed for

use in equipment which require specialized quality and/or reliability, or in equipment which could have

applications in hazardous environments, aerospace industry, or medical field. Please contact us if you

intend our products to be used in these special applications.

ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose,