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FZT751 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza FZT751
Descripción Electrónicos  Silicon PNP RF Power Transistor
PDF  3 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

FZT751 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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Silicon PNP RF Power Transistor
FZT751
www.iscsemi.com
2
ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
BVCBO
Collector-base breakdown voltage
IC=-100μA,IE= 0
-80
--
--
V
BVCEO
Collector-emitter breakdown voltage
IC=-1mA,IB= 0
-60
--
--
V
BVEBO
Emitter-base breakdown voltage
IE=-100μA,IC= 0
-5
--
--
V
ICBO
Collector Cutoff Current
VCB= -60V; IE= 0
--
--
-0.1
μA
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
--
--
-0.1
μA
hFE
DC Current Gain
IC= -50mA ; VCE= -2V
70
--
--
--
IC= -0.5A ; VCE= -2V
100
--
300
--
IC= -1A ; VCE= -2V
80
--
--
--
IC= -2A ; VCE= -2V
40
--
--
--
VCE(sat)
Collector-emitter saturation voltage
IC= -1A; IB= -100mA
--
--
-0.3
V
IC= -3A; IB= -300mA
--
--
-0.6
V
VBE(sat)
Base-emitter saturation voltage
IC= -1A; IB= -100mA
--
--
-1.25
V
VBE(on)
Base-emitter turn-on voltage
VCE= -2V; IC= 1A
--
--
-1.0
V
fT
Current-Gain-Bandwidth Product
IC= -100mA ; VCE= -5V
100
--
--
MHz
Cob
Output capacitance
IE= 0, VCB = -10V, f= 1MHz
--
--
30
pF



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