LE-RTB-N7WM datasheet(5/28 Pages) AMSOSRAM

5 / 28 page

LE RTB N7WM

DATASHEET

5 | Version 1.10 | 2026-03-11

Characteristics

F = 350 mA; TJ = 25 °C

Parameter

Symbol

Values

● red

● true green

● blue

Peak Wavelength

peak

typ.

624 nm

525 nm

459 nm

Dominant Wavelength 3)

dom

min.

typ.

max.

610 nm

617 nm

622 nm

518 nm

530 nm

536 nm

455 nm

465 nm

470 nm

Spectral bandwidth at 50% I

rel,max

∆λ

typ.

18 nm

35 nm

18 nm

Viewing angle at 50% I

2φ

typ.

120 °

Radiating surface

color

typ.

0.65 x 0.65

mm²

0.70 x 0.70

mm²

0.70 x 0.70

mm²

Partial Flux acc. CIE 127:2007 4)

E/V 120° = x * ΦE/V 180°

E/V, 120°

typ.

0.82

Forward Voltage 5)

F = 350 mA

min.

typ.

max.

1.90 V

2.30 V

2.60 V

2.40 V

2.80 V

3.30 V

2.70 V

2.95 V

3.30 V

Reverse voltage (ESD device)

R ESD

min.

45 V

Reverse voltage 2)

R = 20 mA

max.

1.2 V

Real thermal resistance junction/sol-

derpoint

Only one chip on at a time

thJS real

typ.

15 K / W

15.0 K / W

Electrical thermal resistance junction/

solderpoint

With efficiency:

red ηe = 24%; green ηe = 17%;

blue ηe = 38%

thJS elec.

typ.

11 K / W

12 K / W

9.3 K / W

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