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LE-R-S2WP Datasheet(PDF) 5 Page - ams-OSRAM AG |
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LE-R-S2WP Datasheet(HTML) 5 Page - ams-OSRAM AG |
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5 / 22 page ![]() LE R S2WP DATASHEET DATASHEET 5 | Version 1.1 | 2025-03-27 Characteristics I F = 1400 mA; TS = 25 °C; per chip Parameter Symbol Values Peak Wavelength λ peak typ. 633 nm Dominant Wavelength 3) λ dom min. typ. max. 615 nm 625 nm 629 nm Viewing angle at 50% I V 2φ typ. 120 ° Radiating surface A color typ. 2.5 x 3.2 mm² Partial Flux acc. CIE 127:2007 4) I F = 1400 mA Φ E/V, 120° typ. 0.69 Forward Voltage 5) I F = 1400 mA V F min. typ. max. 1.90 V 2.15 V 2.80 V Reverse voltage (ESD device) V R ESD min. 45 V Reverse voltage 2) I R = 20 mA V R max. 1.2 V Real thermal resistance junction/solderpoint 6) R thJS real typ. max. 0.70 K / W 0.80 K / W Electrical thermal resistance junction/solderpoint 6) with efficiency η e = 29 % R thJS elec. typ. max. 0.50 K / W 0.57 K / W |
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