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LE-R-Q8WP Datasheet(PDF) 3 Page - ams-OSRAM AG |
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LE-R-Q8WP Datasheet(HTML) 3 Page - ams-OSRAM AG |
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3 / 19 page ![]() LE R Q8WP 3 Version 1.5 | 2021-01-15 Characteristics I F = 1400 mA; TS = 25 °C Parameter Symbol Values Peak Wavelength λ peak typ. 632 nm Dominant Wavelength 3) λ dom min. typ. max. 618 nm 625 nm 632 nm Spectral bandwidth at 50% I rel,max ∆λ typ. 18 nm Viewing angle at 50% I V 2φ typ. 120 ° Radiating surface A color typ. 1.5 x 1.2 mm² Partial Flux acc. CIE 127:2007 4) I F = 1400 mA Φ E/V, 120° typ. 0.82 Forward Voltage 5) I F = 1400 mA V F min. typ. max. 2.00 V 2.16 V 2.90 V Reverse voltage (ESD device) V R ESD min. 45 V Reverse voltage 2) I R = 20 mA V R max. 1.2 V Real thermal resistance junction/solderpoint 6) R thJS real typ. max. 2.6 K / W 3.6 K / W Electrical thermal resistance junction/solderpoint 6) with efficiency η e = 21 % R thJS elec. typ. max. 2.1 K / W 2.8 K / W |
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