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MSC81250M Datasheet(PDF) 1 Page - STMicroelectronics

No. de pieza MSC81250M
Descripción Electrónicos  RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
PDF  5 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

MSC81250M Datasheet(HTML) 1 Page - STMicroelectronics

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October 1992
AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .400 2NLFL (S042)
hermetically sealed
.
REFRACTORY\GOLD METALLIZATION
.
RUGGEDIZED VSWR 20:1
.
INTERNAL INPUT/OUTPUT MATCHING
.
LOW THERMAL RESISTANCE
.
METAL/CERAMIC HERMETIC PACKAGE
.
POUT
= 250 W MIN. WITH 6.2 dB GAIN
DESCRIPTION
The MSC81250M device is a high power pulsed
transistor specifically designed for DME/TACAN
avionics applications.
This device is capable of withstanding a minimum
20:1 load VSWR at any phase angle under full
rated conditions. Low RF thermal resistance and
semi automatic wire bonding techniques ensure
high reliability and product consistency.
The
MSC81250M
is
housed
in
the
unique
AMPAC
™ package with internal input/output
matching structures.
PIN CONNECTION
BRANDING
81250M
ORDER CODE
MSC81250M
ABSOLUTE MAXIMUM RATINGS (Tcase
= 25°C)
Symbol
Parameter
Value
Uni t
PDISS
Power Dissipation*
(TC
≤ 80°C)
600
W
IC
Device Current*
17.8
A
VCC
Collector-Supply Voltage*
55
V
TJ
Junction Temperature (Pulsed RF Operation)
250
°C
TSTG
Storage Temperature
− 65 to +200
°C
RTH(j-c)
Junction-Case Thermal Resistance*
0.20
°C/W
*Applies only to rated RF amplifier operation
MSC81250M
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/5


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