MJE2955T datasheet(2/4 Pages) STMICROELECTRONICS

No. de pieza	MJE2955T

Descripción Electrónicos	COMPLEMENTARY SILICON POWER TRANSISTORS

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

1.66

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICEO

Collector Cut-off

Current (IB = 0)

VCE = 30 V

700

µA

ICEX

Collector Cut-off

Current (VBE = 1.5V)

VCE = 70 V

TCASE = 150

ICBO

Collector Cut-off

Current (IE = 0)

VCBO = 70 V

TCASE = 150

IEBO

Emitter Cut-off Current

(IC = 0)

VEBO = 5 V

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

IC = 200 mA

VCE(sat)

∗ Collector-Emitter

Sustaining Voltage

IC = 4 A

IB = 0.4 A

IC = 10 A

IB = 3.3 A

1.1

VBE(on)

∗ Base-Emitter on

Voltage

IC = 4 A

VCE = 4 V

1.8

hFE

DC Current Gain

IC = 4 A

VCE = 4 V

IC = 10 A

VCE = 4 V

Transistor Frequency

IC = 500 mA

VCE = 10 V

f = 500 KHz

MHz

∗ Pulsed: Pulse duration = 300µs, duty cycle ≤ 2 %

For PNP type voltage and current values are negative.

MJE2955T / MJE3055T

2/4

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