MJD3055 datasheet(1/6 Pages) STMICROELECTRONICS

No. de pieza	MJD3055

Descripción Electrónicos	COMPLEMENTARY SILICON POWER TRANSISTORS

PDF	6 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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MJD2955

MJD3055

COMPLEMENTARY SILICON POWER TRANSISTORS

s

STM PREFERRED SALESTYPES

s

SURFACE-MOUNTING TO-252 (DPAK)

POWER PACKAGE IN TAPE & REEL

(SUFFIX ”T4”)

s

ELECTRICAL SIMILAR TO MJE2955 AND

MJE3055

APPLICATIONS

s

GENERAL PURPOSE SWITCHING AND

AMPLIFIER TRANSISTORS

DESCRIPTION

The

MJD2955

and

MJD3055

form

complementary

PNP-NPN

pairs.

They

are

manufactured using Epitaxial Base technology for

cost-effective performance.

INTERNAL SCHEMATIC DIAGRAM

June 1998

1

3

DPAK

TO-252

(Suffix ”T4”)

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Uni t

NPN

MJD3055

PNP

MJD2955

VCBO

Collector-Base Voltage (IE =0)

60

V

VCEO

Collector-Emit ter Voltage (IB =0)

70

V

VEBO

Emitter-Base Voltage (IC =0)

5

V

IC

Collector Current

10

A

IB

Base Current

6

A

Ptot

Tot al Dissipation at Tc =25

oC20

W

®

1/6

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