MJ4035 datasheet(1/4 Pages) STMICROELECTRONICS

No. de pieza	MJ4035

Descripción Electrónicos	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

PDF	4 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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MJ4032

MJ4035

COMPLEMENTARY SILICON

POWER DARLINGTON TRANSISTORS

s

SGS-THOMSON PREFERRED SALESTYPES

s

COMPLEMENTARY PNP - NPN DEVICES

s

MONOLITHIC DARLINGTON

CONFIGURATION

s

INTEGRATED ANTIPARALLEL

COLLECTOR-EMITTER DIODE

APPLICATIONS

s

GENERAL PURPOSE SWITCHING

s

GENERAL PURPOSE AMPLIFIERS

DESCRIPTION

The MJ4035 is silicon epitaxial-base NPN power

transistor in monolithic Darlington configuration

mounted in Jedec TO-3 metal case.

It is inteded for use in general purpose and

amplifier applications.

The complementary PNP type is the MJ4032.

INTERNAL SCHEMATIC DIAGRAM

June 1997

1

2

TO-3

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

PNP

MJ4032

NPN

MJ4035

VCBO

Collector-Base Voltage (IE = 0)

100

V

VCEO

Collector-Emitter Voltage (IB = 0)

100

V

VEBO

Emitter-Base Voltage (IC = 0)

5

V

IC

Collector Current

16

A

IB

Base Current

0.5

A

Ptot

Total Dissipation at Tc

≤ 25 oC

150

W

Tstg

Storage Temperature

-65 to 200

oC

Tj

Max. Operating Junction Temperature

200

oC

For PNP types voltage and current values are negative.

R1 Typ. = 6 K

Ω

R2 Typ. = 55

Ω

1/4

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