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DSTF30100S Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza DSTF30100S
Descripción Electrónicos  Schottky Barrier Rectifier Diode
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

DSTF30100S Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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Schottky Barrier Rectifier Diode
DSTF30100S
www.iscsemi.com
1
FEATURES
· High frequency operation
· Ultra low forward voltage drop
· High junction temperature capability
APPLICATIONS
· DC-DC converters
· Switching mode power supply
· Polarity Protection Diodes
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VRRM
max. repetitive reverse blocking voltage
100
V
IF(AV)
Average Forward Current (per device)
50% duty cycle @TC =70°C rectangular wave form
30
A
IFSM
Peak One Cycle Non-Repetitive Surge Current (per leg)
8.3 ms, half Sine pulse
300
A
TJ
junction temperature
150
℃
Tstg
storage temperature
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance Junction to Case (per leg)
DC operation
4.0
℃
/W
ELECTRICAL CHARACTERISTICS(TJ = 25°C unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
VF
Forward Voltage Drop (per leg) IF= 30A
--
--
0.9
V
IR
Reverse Current (per leg)
Rate DC Voltage
--
--
1.0
uA


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