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RGTH50TK65 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza RGTH50TK65
Descripción Electrónicos  Field Stop Trench IGBT
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

RGTH50TK65 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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ISG2315
eq RGTH50TK65
Field Stop Trench IGBT
www.iscsemi.com
1
DESCRIPTION
· Low Saturation Voltage:VCE(sat)=2.1V@IC= 25A
· High Speed Switching
· With Integrated Fast Recovery Diode
APPLICATIONS
· Inverter Circuit
· UPS,PFC
· Bridge Circuit
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
650
V
VGES
Gate-Emitter Voltage
±
30
V
IC
Collector Current-Continuous
@ TC=25℃
26
A
IC
Collector Current-Continuous
@ TC=100℃
16
A
ICM
Pulsed Collector Current
100
A
PD
Power Dissipation @TC=25℃
59
W
Tj
Operating Junction Temperature
-40~175
℃
Tstg
Storage Temperature Range
-40~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case IGBT
2.51
℃
/W


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