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DMP2104LP Datasheet(PDF) 1 Page - Diodes Incorporated |
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DMP2104LP Datasheet(HTML) 1 Page - Diodes Incorporated |
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1 / 4 page  DMP2104LP Document number: DS31091 Rev. 6 - 2 1 of 4 www.diodes.com November 2007 © Diodes Incorporated DMP2104LP P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • P-Channel MOSFET • Very Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • "Green" Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: DFN1411-3 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminal Connections: See Diagram • Terminals: Finish - NiPdAu over Copper lead frame. Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.003 grams (approximate) DFN1411-3 D S G TOP VIEW Maximum Ratings @TA = 25°C unless otherwise specified Internal Schematic TOP VIEW BOTTOM VIEW Characteristic Symbol Value Units Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (Note 1) TA = 25°C TA = 70°C ID -1.5 -1.2 A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Power Dissipation (Note 1) PD 500 mW Thermal Resistance, Junction to Ambient (Note 1) RθJA 250 °C/W Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage BVDSS -20 ⎯ ⎯ V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current TJ = 25°C TJ = 125°C IDSS ⎯ ⎯ -1.0 -5.0 μA VDS = -20V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±12V, VDS = 0V ON CHARACTERISTICS (Note 4) Gate Threshold Voltage VGS(th) -0.45 ⎯ -1.0 V VDS = VGS, ID = -250μA VGS = -4.5V, ID = -950mA VGS = -2.5V, ID = -670mA Static Drain-Source On-Resistance RDS (ON) ⎯ 92 134 180 150 200 240 m Ω VGS = -1.8V, ID = -200mA Forward Transconductance gFS ⎯ 3.1 ⎯ S VDS = -10V, ID = -810mA Diode Forward Voltage (Note 4) VSD ⎯ ⎯ -0.9 V VGS = 0V, IS = -360mA DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ 320 ⎯ pF Output Capacitance Coss ⎯ 80 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 60 ⎯ pF VDS = -16V, VGS = 0V f = 1.0MHz Notes: 1. Device mounted on FR-4 PCB with 1 inch square pads. 2. No purposefully added lead. 3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Short duration pulse test used to minimize self-heating effect. |
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