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MBR10100CD Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MBR10100CD Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  Schottky Barrier Rectifier MBR10100CD www.iscsemi.com 1 FEATURES · Low Forward Voltage Drop · High Surge Capability · Low Power Loss/High Efficiency APPLICATIONS · Switching Power Supplies · DC/DC Converters · Freewheeling Diodes ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 100 V IF(AV) Average Rectified Forward Current 5×2 A IFSM Non-repetitive Peak Surge Current (8.3ms Single Half Sine-wave) 120 A TJ Max. Junction Temperature 150 ℃ Tstg Storage Temperature Range -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.0 ℃ /W |
Número de pieza similar - MBR10100CD |
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Descripción similar - MBR10100CD |
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