M28W800BT datasheet(33/42 Pages) STMICROELECTRONICS

No. de pieza	M28W800BT

Descripción Electrónicos	8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory

PDF	42 Pages

Scroll/Zoom	100%

Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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M28W800BT, M28W800BB

Table 25. CFI Query System Interface Information

Offset

Data

Description

Value

1Bh

0027h

VDD Logic Supply Minimum Program/Erase or Write voltage

bit 7 to 4

BCD value in volts

bit 3 to 0

BCD value in 100 mV

2.7V

1Ch

0036h

VDD Logic Supply Maximum Program/Erase or Write voltage

bit 7 to 4

BCD value in volts

bit 3 to 0

BCD value in 100 mV

3.6V

1Dh

00B4h

VPP [Programming] Supply Minimum Program/Erase voltage

bit 7 to 4

HEX value in volts

bit 3 to 0

BCD value in 100 mV

11.4V

1Eh

00C6h

VPP [Programming] Supply Maximum Program/Erase voltage

bit 7 to 4

HEX value in volts

bit 3 to 0

BCD value in 100 mV

12.6V

1Fh

0004h

Typical timeout per single word program = 2n µs

16µs

20h

0004h

Typical timeout for Double Word Program = 2n µs

16µs

21h

000Ah

Typical timeout per individual block erase = 2n ms

22h

0000h

Typical timeout for full chip erase = 2n ms

23h

0005h

Maximum timeout for word program = 2n times typical

512µs

24h

0005h

Maximum timeout for Double Word Program = 2n times typical

512µs

25h

0003h

Maximum timeout per individual block erase = 2n times typical

26h

0000h

Maximum timeout for chip erase = 2n times typical

M28W800BT Datasheet(PDF) 33 Page - STMicroelectronics

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