BU941ZPFI datasheet(1/2 Pages) ISC

No. de pieza	BU941ZPFI

Descripción Electrónicos	Silicon NPN Darlington Power Transistor

PDF	2 Pages

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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Silicon NPN Darlington Power Transistor

BU941ZPFI

www.iscsemi.com

1

DESCRIPTION

·

Collector–Emitter Sustaining Voltage—

: V(BR)CEO = 350V(Min.)

·

DC Current Gain—

: hFE = 300(Min) @ IC= 5.0A

APPLICATIONS

·

High Ruggedness Electronic Ignitions

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCEO

Collector-Emitter Voltage

350

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

15

A

ICM

Collector Current-Peak, (tp < 5ms)

30

A

IB

Base Current

1

A

IBM

Base Current-Peak, (tp < 5ms)

5

A

PC

Collector Power Dissipation

65

W

Ti

Junction Temperature

-65~175

℃

Tstg

Storage Temperature Range

-65~175

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

2.3

℃

/W

Número de pieza similar - BU941ZPFI

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BU941ZPFI Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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