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AT45DB641E Datasheet(PDF) 74 Page - Renesas Technology Corp

No. de pieza AT45DB641E
Descripción Electrónicos  64-Mbit DataFlash (with Extra 2-Mbits), 1.7 V Minimum SPI Serial Flash Memory
PDF  78 Pages
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Fabricante Electrónico  RENESAS [Renesas Technology Corp]
Página de inicio  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

AT45DB641E Datasheet(HTML) 74 Page - Renesas Technology Corp

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DS-AT45DB641E-027 Rev. O
Page 74
6/30/23
© 2023 Renesas Electronics
AT45DB641E Datasheet
28. Ordering Information (Standard DataFlash Page Size)
1. Contact Renesas Electronics for mechanical drawing or Die Sales information.
Ordering Code
Package
Lead
Finish
Page
Size
Operating
Voltage
fSCK
Device Grade
AT45DB641E-SHN-B
8-lead 208-mil wide, Plastic
Gull Wing Small Outline
(EIAJ SOIC)
NiPdAu
264
1.7 V to 3.6 V
85 MHz
Industrial
(-40
°C to 85 °C)
AT45DB641E-SHN-T
AT45DB641E-SHN2B-T
256
AT45DB641E-MHN-Y
8-pad (5 x 6 x 0.6 mm
body), Thermally Enhanced
Plastic Ultra Thin Dual Flat
No-lead (DFN)
264
AT45DB641E-MHN-T
AT45DB641E-MHN2B-T
256
AT45DB641E-MWHN-Y
8-pad (6 x 8 x 1.0 mm
body), Thermally Enhanced
Plastic Very Thin Dual Flat
No-lead (DFN)
264
AT45DB641E-MWHN-T
AT45DB641E-MWHN2B-T
256
AT45DB641E-DWF[1]
Die in Wafer Form
264
Device Grade
H = Green, NiPdAu lead finish
U = Green, Matte Sn or Sn alloy
Designator
Product Family
Device Density
Shipping Carrier Option
Package Option
641 = 64-Mbit
Device Generation
45DB = DataFlash
B = Bulk (tubes)
T = Tape and reel
Y = Trays
Operating Voltage
N = 1.7 V to 3.6 V
S = 8-lead, 208-mil wide SOIC
M = 8-pad, 5 x 6 x 0.6 mm DFN
MW = 8-pad, 6 x 8 x 1.0 mm DFN
DWF = Die in Wafer Form
A T45DB641E-SHN2B-T
Page Size Option
blank = Standard (264 bytes/page)
2B = Binary (256 bytes/page)



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