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AT45DB321E Datasheet(PDF) 74 Page - Renesas Technology Corp

No. de pieza AT45DB321E
Descripción Electrónicos  32-Mbit DataFlash (with Extra 1-Mbits), 2.3 V Minimum SPI Serial Flash Memory
PDF  80 Pages
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Fabricante Electrónico  RENESAS [Renesas Technology Corp]
Página de inicio  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

AT45DB321E Datasheet(HTML) 74 Page - Renesas Technology Corp

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DS-AT45DB321E-8784 Rev. N
Page 74
9/1/23
© 2023 Renesas Electronics
AT45DB321E Datasheet
Figure 51. Algorithm for Programming or Re-programming of the Entire Array Randomly
Note:
1. To preserve data integrity, each page of an DataFlash sector must be updated/rewritten at least once within every 50,000 cumulative
page erase and program operations
2. A page address pointer must be maintained to indicate which page is to be rewritten. The auto page rewrite command must use the
address specified by the page address pointer
3. Other algorithms can be used to rewrite portions of the Flash array. Low-power applications can choose to wait until 50,000 cumulative
page erase and program operations have accumulated before rewriting all pages of the sector. See application note AN-4 (“Using
Renesas Electronics’s Serial DataFlash”) for more details
START
Main Memory Page
to Buffer Transfer
(53h, 55h)
Increment Page
Address Pointer
(2)
Auto Page Rewrite
(2)
(58h, 59h)
END
Provide Address of
Page to Modify
If planning to modify multiple
bytes currently stored within
a page of the Flash array
Main Memory Page Program
through Buffer
(82h, 85h)
Buffer Write
(84h, 87h)
Buffer to Main
Memory Page Program
(83h, 86h)



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