M45PE40-VMP6TP datasheet(17/46 Pages) NUMONYX

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M45PE40

Instructions

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Instructions

All instructions, addresses and data are shifted in and out of the device, most significant bit

first.

Serial Data Input (D) is sampled on the first rising edge of Serial Clock (C) after Chip Select

(S) is driven Low. Then, the one-byte instruction code must be shifted in to the device, most

significant bit first, on Serial Data Input (D), each bit being latched on the rising edges of

Serial Clock (C).

The instruction set is listed in Table 3.

Every instruction sequence starts with a one-byte instruction code. Depending on the

instruction, this might be followed by address bytes, or by data bytes, or by both or none.

In the case of a Read Data Bytes (READ), Read Data Bytes at Higher Speed (Fast_Read)

or Read Status Register (RDSR) instruction, the shifted-in instruction sequence is followed

by a data-out sequence. Chip Select (S) can be driven High after any bit of the data-out

sequence is being shifted out.

In the case of a Page Write (PW), Page Program (PP), Page Erase (PE), Sector Erase (SE),

Write Enable (WREN), Write Disable (WRDI), Deep Power-down (DP) or Release from

Deep Power-down (RDP) instruction, Chip Select (S) must be driven High exactly at a byte

boundary, otherwise the instruction is rejected, and is not executed. That is, Chip Select (S)

must driven High when the number of clock pulses after Chip Select (S) being driven Low is

an exact multiple of eight.

All attempts to access the memory array during a Write cycle, Program cycle or Erase cycle

are ignored, and the internal Write cycle, Program cycle or Erase cycle continues

unaffected.

Table 3.

Instruction set

Instruction

Description

One-byte instruction

code

Address

bytes

Dummy

bytes

Data

bytes

WREN

Write Enable

0000 0110

06h

WRDI

Write Disable

0000 0100

04h

RDID

Read Identification

1001 1111

9Fh

1 to 3

RDSR

Read Status Register

0000 0101

05h

1 to

∞

READ

Read Data Bytes

0000 0011

03h

1 to

∞

FAST_READ

Read Data Bytes at

Higher Speed

0000 1011

0Bh

1 to

∞

Page Write

0000 1010

0Ah

1 to 256

Page Program

0000 0010

02h

1 to 256

Page Erase

1101 1011

DBh

Sector Erase

1101 1000

D8h

Deep Power-down

1011 1001

B9h

RDP

Release from Deep

Power-down

1010 1011

ABh

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