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MMBT1616A Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited

No. de pieza MMBT1616A
Descripción Electrónicos  NPN Silicon Epitaxial Planar Transistor
PDF  4 Pages
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Fabricante Electrónico  BILIN [Galaxy Semi-Conductor Holdings Limited]
Página de inicio  http://www.galaxycn.com
Logo BILIN - Galaxy Semi-Conductor Holdings Limited

MMBT1616A Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited

  MMBT1616A Datasheet HTML 1Page - Galaxy Semi-Conductor Holdings Limited MMBT1616A Datasheet HTML 2Page - Galaxy Semi-Conductor Holdings Limited MMBT1616A Datasheet HTML 3Page - Galaxy Semi-Conductor Holdings Limited MMBT1616A Datasheet HTML 4Page - Galaxy Semi-Conductor Holdings Limited  
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BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
MMBT1616A
Document number: BL/SSSTC070
www.galaxycn.com
Rev.A
2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=100μA,IE=0
120
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
B
60
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA,IC=0
6
V
Collector cut-off current
ICBO
VCB=60V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=6V,IC=0
0.1
μA
DC current gain
hFE
VCE=2V,IC=100mA
VCE=2V, IC=1A
135
81
400
Collector-emitter saturation voltage
VCE(sat)
IC=1A, IB=50mA
B
0.3
V
Base-emitter saturation voltage
VBE(sat)
IC=1A, IB=50mA
B
1.2
V
Transition frequency
fT
VCE=2V, IC= 100mA
100
MHz
Collector output capacitance
Cob
VCB=10V,IE=0,f=1MHz
19
pF
Turn on time
ton
VCE=10V,IC=100mA
0.07
μS
Fall time
tf
VBE(off)=2-3V
0.07
μS
Storage time
ts
IB1=IB2=10mA
0.95
μS



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