
1 of 12
Optimum Technology Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
Functional Block Diagram
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Ordering Information
2
GND1
3
BIAS
4RF OUT
1
RF IN
GND2
5
RF2373
3V LOW NOISE AMPLIFIER/
3V DRIVER AMPLIFIER
The RF2373 is a low noise amplifier with a very high dynamic range designed for
WLAN and digital cellular applications. The device functions as an outstanding front
end low noise amplifier or driver amplifier in the transmit chain of digital subscriber
units where low transmit noise power is a concern. When used as an LNA, the bias
current can be set externally. When used as a PA driver, the IC can operate directly
from a single cell Li-ion battery and includes a power down feature that can be used
to completely turn off the device. The IC is featured in a standard SOT 5-lead plastic
package.
Features
Low Noise and High Intercept
Point
Adjustable Bias Current
Power Down Control
Single 1.8V to 6.0V Power
Supply
400MHz to 3GHz Operation
Extremely Small SOT 5-Lead
Package
Applications
WLAN LNA/Driver
GPS LNA
CDMA PCS LNA
Low Noise Transmit Power
Amplifier
General Purpose Amplifica-
tion
Driver Amplifier for TX Power
Amplifier
RF23733V Low Noise Amplifier/ 3V Driver Amplifier
RF2373PCK-414
Fully Assembled Evaluation Board with 5 Sample Parts
Rev A5 DS060907
RoHS Compliant & Pb-Free Product
Package Style: SOT 5-Lead