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MA3D649 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MA3D649 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  Fast Recovery Diode MA3D649 www.iscsemi.com 1 FEATURES · Low Forward Voltage Drop · Super High Speed Switching · High Reliability by Planer Design APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 200 V IF(AV) Average Rectified Forward Current 2.5×2 A IFSM Non-repetitive Peak Surge Current (50Hz Sine Wave, 1 Cycle) 30 A TJ Max. Junction Temperature 150 ℃ Tstg Storage Temperature Range -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.0 ℃ /W 12 3 |
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