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AT41532 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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AT41532 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  ISB3013 eq AT41532 isc Silicon NPN Power Transistor www.iscsemi.com 2023-10-10 1 DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 12V(Min) APPLICATIONS · Designed for power amplifier · high speed switching and regulated power supply applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 1.5 V IC Collector Current-Continuous 50 mA PC Collector Power Dissipation 225 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ |
Número de pieza similar - AT41532 |
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Descripción similar - AT41532 |
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