STPSC10H065DI datasheet(4/17 Pages) STMICROELECTRONICS

No. de pieza	STPSC10H065DI

Descripción Electrónicos	650 V, 10 A high surge silicon carbide power Schottky diode

PDF	17 Pages

Scroll/Zoom	100%

Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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1.1

Characteristics (curves)

Figure 1. Forward voltage drop versus forward current

(typical values, low level)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

Ta=150 °C

Ta=175 °C

Ta=25 °C

Pulse test : tp=500µs

Ta=100 °C

VF(V)

IF(A)

Figure 2. Forward voltage drop versus forward current

(typical values, high level)

100

Ta=150 °C

Ta=175 °C

Ta=25 °C

Pulse test : tp=500µs

Ta=100 °C

VF (V)

IF(A)

Figure 3. Reverse leakage current versus reverse voltage

applied (typical values)

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

50 100 150 200 250 300 350 400 450 500 550 600 650

Tj=25 °C

Tj=150 °C

Tj=175 °C

VR(V)

IR(µA)

Figure 4. Peak forward current versus case temperature

(TO-220AC, DPAK, D²PAK)

STPSC10H065

Characteristics (curves)

DS9226 - Rev 8

page 4/17

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