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IS25LE512M-RGLA3:P-TY Datasheet(PDF) 58 Page - Integrated Silicon Solution, Inc

No. de pieza IS25LE512M-RGLA3:P-TY
Descripción Electrónicos  SERIAL FLASH MEMORY 133/112MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE WITH ON-CHIP ECC
PDF  189 Pages
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Fabricante Electrónico  ISSI [Integrated Silicon Solution, Inc]
Página de inicio  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS25LE512M-RGLA3:P-TY Datasheet(HTML) 58 Page - Integrated Silicon Solution, Inc

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IS25LE512M
IS25WE512M
Integrated Silicon Solution, Inc.- www.issi.com
58
Rev. A6
06/16/2025
Instruction
Name
Operation
Mode
Byte0
Byte1
Byte2
Byte3
Byte4
Byte5
Byte6
RDPWD
Read Password
SPI
E7h
Data out
(8 byte)
PGPWD
Program
Password
SPI
QPI
E8h
PD
(8 byte)
UNPWD
Unlock
Password
SPI
QPI
E9h
Data in
(8 byte)
GBLK
Set all DYB bits
(Gang Sector/
Block Lock)
SPI
QPI
7Eh
GBUN
Clear all DYB bits
(Gang Sector/
Block Unlock)
SPI
QPI
98h
RDDLP
Read Data
Learning Pattern
SPI
QPI
41h
Data out
PNVDLR
Program DLP
Register (Non-
Volatile)
SPI
QPI
43h
Data in
WRVDLR
Write DLP
Register
(Volatile)
SPI
QPI
4Ah
Data in
RDECC
Read ECC
register
SPI
QPI
B3h
Data in
WRECC
Write ECC
register
SPI
QPI
B5h
Data in
CLECC
Clear ECC
Register
SPI
QPI
B6h
Notes:
1. The number of dummy cycles depends on the value setting in the Table 6.11 Read Dummy Cycles.
2. AXh has to be counted as a part of dummy cycles. X means
“don’t care”.
3.
XX means “don’t care”.
4. A<23:9> are
“don’t care” and A<8:4> are always “0”.



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