Characteristics

STPS8L30

2/9

DocID5515 Rev 5

1

Characteristics

Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

30

V

IF(RMS)

Forward rms current

7

A

IF(AV)

Average forward current

δ = 0.5, square wave

TC = 135 °C

8

A

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

75

A

PARM

Repetitive peak avalanche power

tp = 10 µs, Tj = 125 °C

215

W

Tstg

Storage temperature range

-65 to +150

°C

Tj

Maximum operating junction temperature (1)

150

°C

Notes:

(1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 3: Thermal parameters

Symbol

Parameter

Max. value

Unit

Rth(j-c)

Junction to case

2.5

°C/W

Table 4: Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

1

mA

Tj = 100 °C

-

15

40

VF(1)

Forward voltage drop

Tj = 25 °C

IF = 8 A

-

0.49

V

Tj = 125 °C

-

0.35

0.40

Tj = 25 °C

IF = 16 A

-

0.63

Tj = 125 °C

-

0.448

0.57

Notes:

(1)Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 0.23 x IF(AV) + 0.021 x IF2(RMS)