Figure 5. Reverse leakage current versus reverse voltage

applied (typical values)

I (mA)

R

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

0

20

25

V (V)

R

T =150°C

j

T =25°C

j

T =100°C

j

T =125°C

j

5

10

15

Figure 6. Junction capacitance versus reverse voltage

applied (typical values)

C(pF)

10

100

1000

1

10

100

V (V)

R

F=1MHz

V

=30mV

T =25°C

OSC

RMS

j

Figure 7. Forward voltage drop versus forward current

(high level)

I (A)

F

V (V)

F

Tj =125°C

(maximum values)

Tj =125°C

(typical values)

Tj =25°C

(maximum values)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.1

1.0

10.0

Figure 8. Forward voltage drop versus forward current

(low level)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.0

0.5

1.0

1.5

2.0

2.5

3.0

I (A)

F

V (V)

F

Tj =125°C

(maximum values)

Tj =125°C

(typical values)

Tj =25°C

(maximum values)

Figure 9. Forward voltage drop versus forward current

(typical values)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.10

1.00

10.00

I (A)

F

V (V)

F

T =25°C

j

T =125°C

j

T =150°C

j

Figure 10. Thermal resistance junction to ambient versus

copper surface under each lead

0

50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

R

(°C/W)

th(j-a)

SMB

S(Cu)(cm²)

Epoxy p ri nted ci rcuit board FR4, coppe r t hickness: 35 µm

STPS2L25

Characteristics (curves)

DS1245 - Rev 7

page 4/12