1

Characteristics

Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

25

V

IF(RMS) Forward rms current

10

A

IF(AV)

Average forward current, δ = 0.5 square wave

SMB

TL = 125 °C

2

A

SMA Flat Notch

TL = 130 °C

IFSM

Surge non repetitive forward current

SMB

tp = 10 ms sinusoidal

75

A

SMA Flat Notch

90

PARM

Repetitive peak avalanche power

tp = 10 µs, Tj = 125 °C

108

W

Tstg

Storage temperature range

-65 to +150

°C

Tj

Maximum operating junction temperature(1)

+150

°C

1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 2. Thermal resistance parameter

Symbol

Parameter

Max. value

Unit

Rth(j-l)

Junction to lead

SMB

25

°C/W

SMA Flat Notch

20

For more information, please refer to the following application note :

•

AN5088 : Rectifiers thermal management, handling and mounting recommendations

Table 3. Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

90

µA

Tj = 125 °C

-

15

30

mA

VF(1)

Forward voltage drop

Tj = 25 °C

IF = 2 A

-

0.450

V

Tj = 125 °C

-

0.325

0.375

Tj = 25 °C

IF = 4 A

-

0.530

Tj = 125 °C

-

0.430

0.510

1. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 0.24 x IF(AV) + 0.068 x IF2(RMS)

For more information, please refer to the following application notes related to the power losses :

•

AN604: Calculation of conduction losses in a power rectifier

•

AN4021: Calculation of reverse losses on a power diode

STPS2L25

Characteristics

DS1245 - Rev 7

page 2/12