CSD87381P

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SLPS405F – MARCH 2013 – REVISED MARCH 2015

5 Specifications

5.1 Absolute Maximum Ratings

TA = 25°C (unless otherwise noted)

(1)

MIN

MAX

UNIT

VIN to PGND

–0.8

30

VSW to PGND

30

Voltage

VSW to PGND (10 ns)

32

V

TG to VSW

–8

10

BG to PGND

–8

10

IDM

Pulsed Current Rating(2)

40

A

PD

Power Dissipation(3)

4

W

Sync FET, ID = 27, L = 0.1 mH

36

EAS

Avalanche Energy

mJ

Control FET, ID = 20, L = 0.1 mH

20

TJ

Operating Junction

–55

150

°C

Tstg

Storage Temperature Range

–55

150

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated is not implied. Exposure to

absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

Pulse Duration

≤50 µs, duty cycle ≤0.01

(3)

Device mounted on FR4 material with 1 inch2 (6.45 cm2) Cu

5.2 Recommended Operating Conditions

TA = 25° (unless otherwise noted)

MIN

MAX

UNIT

VGS

Gate Drive Voltage

4.5

8

V

VIN

Input Supply Voltage

24

V

ƒSW

Switching Frequency

CBST = 0.1 μF (min)

200

1500

kHz

No Airflow

15

Operating Current

With Airflow (200 LFM)

20

A

With Airflow + Heat Sink

25

TJ

Operating Temperature

125

°C

5.3 Power Block Performance

TA = 25° (unless otherwise noted)

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

VIN = 12 V, VGS = 5 V,

VOUT = 1.3 V, IOUT = 8 A,

PLOSS

Power Loss(1)

1

W

ƒSW = 500 kHz,

LOUT = 0.3 µH, TJ = 25ºC

TG to TGR = 0 V

IQVIN

VIN Quiescent Current

10

µA

BG to PGND = 0 V

(1)

Measurement made with six 10 µF (TDK C3216X5R1C106KT or equivalent) ceramic capacitors placed across VIN to PGND pins and

using a high current 5 V driver IC.

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