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Motor de Búsqueda de Datasheet de Componentes Electrónicos |
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CB45000 Datasheet(PDF) 1 Page - STMicroelectronics |
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CB45000 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 16 page  CB45000 SERIES HCMOS6 STANDARD CELLS March 1998 1/16 ® FEATURES s 0.35 micron 5 layer metal HCMOS6 process, retrograde well technology, low resistance salicided active areas and polysilicide gates. s 3.3 V optimized transistor with 5 V I/O inter- face capability s 2 - input NAND delay of 160 ps (typ) with fanout = 2. s Broad I/O functionality including Low Voltage CMOS, Low Voltage TTL and LVDS. Driving capability to ISA, EISA, PCI, MCA, and SCSI interface levels s High drive I/O; capability of sinking up to 24 mA with slew rate control, current spike sup- pression and impedance matching. s Generators to support Single Port RAM, Dual Port RAM, and ROM with BIST options. s DRAM integration in ASIC methodology s Extensive embedded function library includ- ing ST DSP and micro cores, third party micros and Synopsys synthetic libraries. s Fully independent power and ground config- urations for inputs, core and outputs. s I/O ring capability up to 1000 pads. s Latchup trigger current > +/- 500 mA. ESD protection > +/- 4000 volts typical value s Oscillators for wide frequency spectrum. s Broad range of 500+ SSI cells s Design For Test features including IEEE 1149.1 JTAG Boundary Scan architecture. s Cadence, Mentor and Synopsys based design systems with interfaces from multiple workstations. s Broad ceramic and plastic package range. CB45000 Super-Integration Cost Effective Product s Architecture Partitioning s Trouble free integration s Application Specific Your Product is Unique s User specified cell integration s Design Confidentiality s IP fully re-usable DSP ST20 DPRAM ROM |
Número de pieza similar - CB45000 |
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Descripción similar - CB45000 |
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