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VN610SP Datasheet(PDF) 16 Page - STMicroelectronics

No. de pieza VN610SP
Descripción Electrónicos  Single channel high-side solid state relay
PDF  26 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

VN610SP Datasheet(HTML) 16 Page - STMicroelectronics

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Application information
VN610SP
16/26
Doc ID 6236
Rev 5
3
Application information
Figure 19. Application schematic
3.1
GND protection network against reverse battery
This section provides two solutions for implementing a ground protection network against
reverse battery.
3.1.1
Solution 1: a resistor in the ground line (RGND only)
This can be used with any type of load.
The following show how to dimension the RGND resistor:
1.
RGND ≤ 600mV / 2 (IS(on)max)
2.
RGND ≥ ( - VCC) / ( - IGND)
where - IGND is the DC reverse ground pin current and can be found in the absolute
maximum rating section of the device datasheet.
Power dissipation in RGND (when VCC < 0 during reverse battery situations) is:
PD = ( - VCC)
2/ R
GND
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where IS(on)max becomes the sum of the
maximum on-state currents of the different devices.
Please note that, if the microprocessor ground is not shared by the device ground, then the
RGND will produce a shift (IS(on)max * RGND) in the input thresholds and the status output
values. This shift will vary depending on how many devices are ON in the case of several
high-side drivers sharing the same RGND .
VCC
GND
OUTPUT
DGND
RGND
Dld
μC
+5V
Rprot
VGND
INPUT
CURRENT SENSE
RSENSE
Rprot
Obsolete
Product(s)
- Obsolete
Product(s)



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