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IRG4BC30FD Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza IRG4BC30FD
Descripción Electrónicos  IGBT
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRG4BC30FD Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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ISG2235
eq IRG4BC30FD
IGBT
www.iscsemi.com
1
DESCRIPTION
· Low VCE(ON) and Switching Losses
· High Speed Switching
· Low Power Loss
APPLICATIONS
· Welding
· PFC
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
600
V
VGES
Gate-Emitter Voltage
±
20
V
IC
Collector Current-Continuous
@ TC=25℃
31
A
IC
Collector Current-Continuous
@ TC=100℃
17
A
ICM
Pulsed Collector Current@ TC=25℃
124
A
PD
Power Dissipation @TC=25℃
100
W
PD
Power Dissipation @TC=100℃
42
W
Tj
Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.2
℃
/W
3
2
1
TO-220C Package


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