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TSC2011H Datasheet(PDF) 9 Page - STMicroelectronics

No. de pieza TSC2011H
Descripción Electrónicos  High temperature, high voltage, precision, bidirectional current sense amplifiers
PDF  49 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

TSC2011H Datasheet(HTML) 9 Page - STMicroelectronics

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Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
Iout
Output current
Sink mode
Tmin < T < Tmax
25
15
36
50
60
mA
Source mode
Tmin < T < Tmax
12
8
25
45
55
Reg Load
Load regulation
Iout = -10 to +10 mA
0.3
1.5
mV/mA
OFFSET adjustment
Rt
Ratiometric accuracy
0.5
V/V
Acc
Accuracy, RTO
Voltage applied to Vref1 and Vref2 in
parallel
0.1
%
Dynamic performance
BW
Small signal -3 dB bandwidth
Rl = 10 kΩ, Cl = 100 pF
kHz
TSC2010H
650
820
TSC2010H, Tmin < T < Tmax
300
TSC2011H
600
750
TSC2011H, Tmin < T < Tmax
270
TSC2012H
390
490
TSC2012H, Tmin < T < Tmax
180
SR
Slew rate
Rl = 10 kΩ, Cl = 100 pF, Vicm = 1 V
V/µs
TSC2010H, Vsense = 230 mV
5.7
7.5
TSC2010H, Tmin < T < Tmax
3.6
TSC2011H, Vsense = 78 mV
5.4
7
TSC2011H, Tmin < T < Tmax
3.4
TSC2012H, Vsense = 47 mV
4.4
5.2
TSC2012H, Tmin < T < Tmax
2.6
En
Noise, RTI
Spectral density, RTI
0.1 Hz to 10 Hz
f = 1 kHz
37
100
µVpp
nV/√Hz
Shutdown function (active high)
Vil
Logical low level
0
0.3xVcc
V
Vih
Logical high level
0.7xVcc
Vcc
Iih
Leakage current
Vshdn = Vcc (shutdown mode)
1.2
µA
Ton
Turn-on time
Vshdn= 5 V to 0 V, Rl = 10 kΩ
µs
TSC2011H
6
TSC2010H, TSC2012H
8
Toff
Turn-off time
Vshdn = 0 V to 5 V, Rl= 10 kΩ
µs
TSC2011H
4
TSC2010H, TSC2012H
5
Iout
Output leakage current
Shdn active
50
nA
1. RTI stands for “Related to input”.
2. Vsense = (Vin+) – (Vin-).
TSC2010H, TSC2011H, TSC2012H
Electrical characteristics
DS13791 - Rev 2
page 9/49



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