STPS3150 datasheet(4/10 Pages) STMICROELECTRONICS

4 / 10 page

Characteristics

STPS3150

4/10

Figure 9.

Relative variation of thermal

impedance junction to ambient

versus pulse duration (SMB)

Figure 10.

Relative variation of thermal

impedance junction to ambient

versus pulse duration (DO-2001AD)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

Z/R

th(j-a)

δ=tp/T

t (s)

SMB

Single pulse

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

Z/R

th(j-a)

δ=tp/T

t (s)

DO-201AD

Single pulse

Figure 11.

Relative variation of thermal

impedance junction to lead

versus pulse duration - SMB flat

Figure 12.

Reverse leakage current versus

reverse voltage applied (typical

values)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Z/R

th(j-l)

SMB flat

t (s)

Single pulse

I (µA)

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

100

125

150

V (V)

T =125°C

T =150°C

T =100°C

T =50°C

T =25°C

T =75°C

Figure 13.

Junction capacitance versus

reverse voltage applied (typical

values)

Figure 14.

Forward voltage drop versus

forward current

C(pF)

100

1000

100

1000

F=1MHz

=30mV

T =25°C

OSC

RMS

V (V)

(A)

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

(V)

T =25°C

(maximum values)

T =125°C

(typical values)

T =125°C

(maximum values)

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