BUV48A datasheet(1/7 Pages) STMICROELECTRONICS

No. de pieza	BUV48A

Descripción Electrónicos	HIGH POWER NPN SILICON TRANSISTORS

PDF	7 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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BUX48/48A

BUV48A/V48AFI

HIGH POWER NPN SILICON TRANSISTORS

s

STMicroelectronics PREFERRED

SALESTYPES

s

NPN TRANSISTOR

s

HIGH VOLTAGE CAPABILITY

s

HIGH CURRENT CAPABILITY

s

FAST SWITCHING SPEED

APPLICATIONS

s

SWITCH MODE POWER SUPPLIES

s

FLYBACK AND FORWARD SINGLE

TRANSISTOR LOW POWER CONVERTERS

DESCRIPTION

The BUX48/A, BUV48A and BUV48AFI are

silicon

Multiepitaxial

Mesa

NPN

transistors

mounted respectively in TO-3 metal case, TO-218

plastic package and ISOWATT218 fully isolated

package. They are particulary intended for

switching and industrial applications from single

and tree-phase mains.

INTERNAL SCHEMATIC DIAGRAM

January 2000

1

2

3

ISOWATT218

1

2

TO-3

1

2

3

TO-218

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

BUX48

BUX48A

BUV48A

BUV48AFI

VCER

Collector-Emitter Voltage (RBE = 10

Ω)

850

1000

V

VCES

Collector-Emitter Voltage (VBE = 0)

850

1000

V

VCEO

Collector-Emitter Voltage (IB = 0)

400

450

V

VEBO

Emitter-Base Voltage (IC = 0)

7

V

IC

Collector Current

15

A

ICM

Collector Peak Current

30

A

ICP

Collector Peak Current non repetitive (tp <20

µs)

55

A

IB

Base Current

4

A

IBM

Base Peak Current

20

A

TO-3

TO-218

ISOWATT218

Ptot

Total Dissipation at Tc = 25

oC

175

125

55

W

Tstg

Storage Temperature

-65 to200

-65 to 150

oC

Tj

Max. Operating Junction Temperature

200

150

oC

®

For TO-3 Package

Others Packages

1/7

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