BUT70 datasheet(1/4 Pages) STMICROELECTRONICS

No. de pieza	BUT70

Descripción Electrónicos	HIGH POWER NPN SILICON TRANSISTOR

PDF	4 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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BUT70

HIGH POWER NPN SILICON TRANSISTOR

s

SGS-THOMSON PREFERRED SALESTYPE

s

NPN TRANSISTOR

s

HIGH CURRENT CAPABILITY

s

FAST SWITCHING SPEED

s

VERY LOW SATURATION VOLTAGE AND

HIGH GAIN

APPLICATION

s

SWITCHING REGULATORS

s

MOTOR CONTROL

s

HIGH FREQUENCY AND EFFICENCY

CONVERTERS

DESCRIPTION

The BUT70 is a Multiepitaxial planar NPN

transistor in TO-218 plastic package.

It’s intented for use in high frequency

and

efficiency converters such us motor controllers

and industrial equipment.

INTERNAL SCHEMATIC DIAGRAM

July 1997

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VCEV

Collector-emitter Voltage (VBE = -1.5V)

200

V

VCEO

Collector-emitter Voltage (IB = 0)

125

V

VEBO

Emitter-Base Voltage (IC = 0)

7

V

IE(RMS)

Emitter Current

40

A

IEM

Emitter Peak Current

120

A

IB

Base Current

8

A

IBM

Base Peak Current

24

A

Ptot

Total Power Dissipation at Tcase

< 25 oC

200

W

Tstg

Storage Temperature

-65 to 150

oC

Tj

Max Operating Junction Temperature

150

oC

1

2

3

TO-218

1/4

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