BUL58D datasheet(2/6 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-ca se

Rthj- amb

Thermal Resistance Junction-Case

Max

Thermal Resistance Junction-Ambient

Max

1.47

62.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICES

Collect or Cut-off

Current (VBE =0)

VCE =800 V

VCEO =800 V

Tj =125

200

500

µA

ICEO

Collect or Cut-off

Current (IB =0)

VCE =450 V

200

µA

VCEO(sus)

Collect or-Emitter

Sustaining Voltage

IC = 100 mA

L = 25 mH

450

VEBO

Emitt er-Base Voltage

(IC =0)

IE =10 mA

VCE(sat)

∗ Collector-Emitter

Saturat ion Voltage

IC =4 A

IB =0.8 A

IC =5 A

IB =1 A

1.5

VBE(s at)

∗ Base-Emitter

Saturat ion Voltage

IC =4 A

IB =0.8 A

IC =5 A

IB =1 A

1.3

1.5

hFE

∗

DC Current G ain

IC =5 A

VCE =5 V

IC =500 mA

VCE =5 V

INDUCTIVE LOAD

St orage Time

Fall T ime

IC =2 A

IB1 =0.4 A

VBE(off) =-5 V

RBB =0

Ω

VCL = 250 V

L = 200

µH

1.8

180

µs

INDUCTIVE LOAD

St orage Time

Fall T ime

IC =2 A

IB1 =0.4 A

VBE(off) =-5 V

RBB =0

Ω

VCL = 250 V

L = 200

µH

Tj = 125

1.5

180

µs

Diode Forward Volt age

IC =3 A

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Areas

Derating Curve

BUL58D

2/6

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