BUH2M20AP datasheet(1/4 Pages) STMICROELECTRONICS

No. de pieza	BUH2M20AP

Descripción Electrónicos	HIGH VOLTAGE NPN SILICON POWER TRANSISTOR

PDF	4 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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BUH2M20AP

HIGH VOLTAGE NPN SILICON

POWER TRANSISTOR

s

EXTRA HIGH VOLTAGE CAPABILITY

s

LOW OUTPUT CAPACITANCE

s

CHARACTERIZED FOR LINEAR MODE

OPERATION.

APPLICATIONS:

s

DESIGNED SPECIFICALLY FOR DYNAMIC

FOCUS IN CTV AND MONITOR.

DESCRIPTION

The

BUH2M20AP

is

manufactured

using

Multiepitaxial Mesa technology for cost-effective

high performance.

®

INTERNAL SCHEMATIC DIAGRAM

September 1998

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage (IE = 0)

2000

V

VCEO

Collector-Emitter Voltage (IB = 0)

1200

V

VEBO

Emitter-Base Voltage (IC = 0)

5

V

IC

Collector Current

30

mA

ICM

Collector Peak Current (tp < 5 ms)

40

mA

Ptot

Total Dissipation at Tc = 25

o C20

W

Tstg

Storage Temperature

-65 to 150

oC

Tj

Max. Operating Junction Temperature

150

oC

1

2

3

TO-220

1/4

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