BU807 datasheet(1/4 Pages) STMICROELECTRONICS

No. de pieza	BU807

Descripción Electrónicos	MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTORS

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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BU806

BU807

MEDIUM VOLTAGE NPN FAST SWITCHING

DARLINGTON TRANSISTORS

s

STMicroelectronics PREFERRED

SALESTYPES

s

NPN DARLINGTONS

s

LOW BASE-DRIVE REQUIREMENTS

s

INTEGRATED ANTIPARALLEL

COLLECTOR-EMITTER DIODE

APPLICATION

s

HORIZONTAL DEFLECTION FOR

MONOCHROME TVs

DESCRIPTION

The devices are silicon Epitaxial Planar NPN

power transistors in Darlington configuration with

integrated base-emitter speed-up diode, mounted

in TO-220 plastic package.

They can be used in horizontal output stages of

110

oCRT video displays.

INTERNAL SCHEMATIC DIAGRAM

October 2003

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

BU806

BU807

VCBO

Collector-base Voltage (IE = 0)

400

330

V

VCEV

Collector-emitter Voltage (VBE = -6V)

400

330

V

VCEO

Collector-emitter Voltage (IB = 0)

200

150

V

VEBO

Emitter-Base Voltage (IC = 0)

6

V

IC

Collector Current

8

A

ICM

Collector Peak Current

15

A

IDM

Damper Diode Peak Forward Current

10

A

IB

Base Current

2

A

Ptot

Total Power Dissipation at Tcase

< 25 oC

60

W

Tstg

Storage Temperature

-65 to 150

oC

Tj

Max Operating Junction Temperature

150

oC

1

2

3

TO-220

®

1/4

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