0

25

50

75

100

125

0

5

10

15

20

25

30

IT(rms)(A)

Tcase(°C)

α = 180°

Fig. 3: RMS on-state current versus case temperature.

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2 5E+2

0.01

0.10

1.00

K=[Zth/Rth]

Zth(j-c)

Zth(j-a)

tp(s)

Fig. 4: Relative variation of thermal impedance versus

pulse duration.

-40

-20

0

20

40

60

80

100

120

140

0.0

0.5

1.0

1.5

2.0

2.5

IGT,IH[Tj] / IGT,IH[Tj=25°C]

IGT

IH

Tj(°C)

Fig. 5: Relative variation of gate trigger current and

holding current versus junction temperature (typical

values).

1

10

100

1000

0

20

40

60

80

100

120

140

160

180

200

220

ITSM(A)

Tj initial=25°C

F=50Hz

Number of cycles

Fig. 6: Non Repetitive surge peak on-state current

versus number of cycles.

12

5

10

100

200

500

1000

ITSM(A),I²t(A²s)

Tj initial=25°C

ITSM

I²t

tp(ms)

Fig. 7: Non repetitive surge peak on-state current for a

sinusoidal

pulse

with

width

:

t

≤ 10ms, and

corresponding value of I2t.

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

1

10

100

300

ITM(A)

Tj=25°C

Tj max.:

Vto=0.95V

Rt=19m

Ω

Tj=Tj max.

VTM(V)

Fig. 8: On-state characteristics (maximum values).

BTB24 B

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