AM1011-400 datasheet(1/6 Pages) STMICROELECTRONICS

No. de pieza	AM1011-400

Descripción Electrónicos	L-BAND AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS

PDF	6 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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1 / 6 page

September 1992

L-BAND AVIONICS APPLICATIONS

RF & MICROWAVE TRANSISTORS

.400 x .500 2LFL (S038)

hermetically sealed

.

REFRACTORY/GOLD METALLIZATION

.

EMITTER SITE BALLASTED

.

15:1 VSWR CAPABILITY

.

LOW THERMAL RESISTANCE

.

INPUT/OUTPUT MATCHING

.

OVERLAY GEOMETRY

.

METAL/CERAMIC HERMETIC PACKAGE

.

POUT

= 400 W MIN. WITH 8.0 dB GAIN

DESCRIPTION

The AM1011-400 device is a high power Class

C transistor specifically designed for TCAS and

Mode-S pulsed output and driver applications.

This device is designed for operation under moder-

ate pulse width and duty cycle pulse conditions

and is capable of withstanding 15:1 output VSWR

at rated RF conditions. Low RF thermal resistance

and computerized automatic wire bonding tech-

niques ensure high reliability and product consist-

ency.

The AM1011-400 is supplied in the BIGPAC

™ Her-

metic Metal/Ceramic package Input/Output match-

ing structures.

PIN CONNECTION

BRANDING

1011-400

ORDER CODE

AM1011-400

ABSOLUTE MAXIMUM RATINGS (Tcase

= 25°C)

Symbol

Parameter

Value

Uni t

PDISS

Power Dissipation*

(TC

≤ 100°C)

880

W

IC

Device Current*

24

A

VCC

Collector-Supply Voltage*

55

V

TJ

Junction Temperature (Pulsed RF Operation)

250

°C

TSTG

Storage Temperature

− 65 to +200

°C

RTH(j-c)

Junction-Case Thermal Resistance*

0.17

°C/W

*Applies only to rated RF amplifier operation

AM1011-400

1. Collector

3. Emitter

2. Base

4. Base

THERMAL DATA

1/6

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