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STTH1R02Q Datasheet(PDF) 1 Page - STMicroelectronics |
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STTH1R02Q Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 10 page  March 2007 Rev 3 1/10 STTH1R02 Ultrafast recovery diode Main product characteristics Features and benefits ■ Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ High junction temperature Description The STTH1R02 uses ST's new 200 V planar Pt doping technology, and it is specially suited for switching mode base drive and transistor circuits. Packaged in DO-41, DO-15, SMA, and SMB, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection. Order codes IF(AV) 1.5 A VRRM 200 V Tj (max) 175° C VF (typ) 0.7 V trr (typ) 15 ns Part Number Marking STTH1R02 STTH1R02 STTH1R02RL STTH1R02 STTH1R02A R1A STTH1R02Q STTH1R02Q STTH1R02QRL STTH1R02Q STTH1R02U 1R2S K A K K A A SMA STTH1R02A SMB STTH1R02U K K A A DO-41 STTH1R02 DO-15 STTH1R02Q www.st.com |
Número de pieza similar - STTH1R02Q |
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