TLE2161, TLE2161A, TLE2161B

EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE

µPOWER OPERATIONAL AMPLIFIERS

SLOS049D – NOVEMBER 1989 – REVISED MAY 1996

1

POST OFFICE BOX 655303

• DALLAS, TEXAS 75265

D Excellent Output Drive Capability

VO = ± 2.5 V Min at RL = 100 Ω,

VCC± = ± 5 V

VO = ± 12.5 V Min at RL = 600 Ω,

VCC± = ± 15 V

D Low Supply Current... 280 µA Typ

D Decompensated for High Slew Rate and

Gain-Bandwidth Product

AVD = 0.5 Min

Slew Rate = 10 V/

µs Typ

Gain-Bandwidth Product = 6.5 MHz Typ

D Wide Operating Supply Voltage Range

VCC ± = ± 3.5 V to ± 18 V

D High Open-Loop Gain... 280 V/mV Typ

D Low Offset Voltage . . . 500 µV Max

D Low Offset Voltage Drift With Time

0.04

µV/Month Typ

D Low Input Bias Current...5 pA Typ

description

The TLE2161, TLE2161A, and TLE2161B are

JFET-input, low-power, precision operational

amplifiers

manufactured

using

the

Texas

Instruments Excalibur process. Decompensated

for stability with a minimum closed-loop gain of 5,

these devices combine outstanding output drive

capability with low power consumption, excellent

dc precision, and high gain-bandwidth product.

In addition to maintaining the traditional JFET

advantages of fast slew rates and low input bias

and offset currents, the Excalibur process offers

outstanding parametric stability over time and

temperature. This results in a device that remains

precise even with changes in temperature and

over years of use.

AVAILABLE OPTIONS

PACKAGE

TA

VIOmax

AT 25

°C

SMALL

OUTLINE

CHIP

CARRIER

CERAMIC

DIP

PLASTIC

DIP

AT 25 C

OUTLINE

(D)

CARRIER

(FK)

DIP

(JG)

DIP

(P)

0

°C

to

500

µV

15 mV

—

TLE2161ACD

—

—

TLE2161BCP

TLE2161ACP

to

70

°C

1.5 mV

3 mV

TLE2161ACD

TLE2161CD

—

—

TLE2161ACP

TLE2161CP

–40

°C

to

500

µV

15 mV

—

TLE2161AID

—

—

TLE2161BIP

TLE2161AIP

to

85

°C

1.5 mV

3 mV

TLE2161AID

TLE2161ID

—

—

TLE2161AIP

TLE2161IP

–55

°C

to

500

µV

15 mV

—

TLE2161AMD

—

TLE2161AMFK

TLE2161BMJG

TLE2161AMJG

TLE2161BMP

TLE2161AMP

to

125

°C

1.5 mV

3 mV

TLE2161AMD

TLE2161MD

TLE2161AMFK

TLE2161MFK

TLE2161AMJG

TLE2161MJG

TLE2161AMP

TLE2161MP

The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2161ACDR).

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

Copyright

© 1996, Texas Instruments Incorporated

10 k

1 k

100

RL – Load Resistance – Ω

10

0

2

4

6

8

10

TA = 25°C

MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE

vs

LOAD RESISTANCE

VCC

± = ± 5 V