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74V1T00C Datasheet(PDF) 3 Page - STMicroelectronics

No. de pieza 74V1T00C
Descripción Electrónicos  SINGLE 2-INPUT NAND GATE
PDF  7 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

74V1T00C Datasheet(HTML) 3 Page - STMicroelectronics

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DC SPECIFICATIONS
Symb ol
Parameter
T est Cond ition s
Val ue
Un it
VCC
(V)
TA =25
oC
-40 to 85
oC
Min.
Typ .
Max.
Min .
Max.
VIH
High Level Input
Voltage
4.5 to 5.5
2
2
V
VIL
Low Level Input
Voltage
4.5 to 5.5
0.8
0.8
V
VOH
High Level Output
Voltage
4.5
IO=-50
µA
4.4
4.5
4.4
V
4.5
IO=-8 mA
3.94
3.8
VOL
Low Level Output
Voltage
4.5
IO=50
µA
0.0
0.1
0.1
V
4.5
IO=8 mA
0.36
0.44
II
Input Leakage Current
0 to 5.5
VI = 5.5V or GND
±0.1
±1.0
µA
ICC
Quiescent Supply
Current
5.5
VI =VCC or GND
1
10
µA
∆ICC
Additional Worst Case
Supply Current
5.5
One Input at 3.4V,
other input at VCC or
GND
1.35
1.5
mA
IOPD
Output Leakage
Current
0VOUT = 5.5V
0
0.5
5.0
µA
CAPACITIVE CHARACTERISTICS
Symb ol
Parameter
T est Cond ition s
Val ue
Un it
TA =25
oC
-40 to 85
oC
Min.
Typ .
Max.
Min .
Max.
CIN
Input Capacitance
4
10
10
pF
CPD
Power Dissipation
Capacitance (note 1)
10.5
pF
1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto
Test Circuit).Average operating current can be obtained by the following equation. ICC(opr) = CPD
•VCC •fIN +ICC
AC ELECTRICAL CHARACTERISTICS (Input tr =tf =3 ns)
Symb ol
Parameter
Test Co nditi on
Val ue
Un it
VCC (*)
(V)
CL
(p F)
TA =25
oC
-40 to 85
oC
Min.
Typ .
Max.
Min .
Max.
tPLH
tPHL
Propagation Delay
Time
5.0
15
5.0
7.0
1.0
8.0
ns
5.0
50
5.5
8.0
1.0
9.0
(*) Voltage range is 5V
± 0.5V
74V1T00
3/7



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