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STR910FAM32X6 Datasheet(PDF) 88 Page - STMicroelectronics

No. de pieza STR910FAM32X6
Descripción Electrónicos  ARM966E-S??16/32-Bit Flash MCU with Ethernet, USB, CAN, AC motor control, 4 timers, ADC, RTC, DMA
PDF  99 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STR910FAM32X6 Datasheet(HTML) 88 Page - STMicroelectronics

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Electrical characteristics
STR91xFAx32 STR91xFAx42 STR91xFAx44
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tCONV(FT] Fast trigger mode conversion time
(5)
1*16/fADC
µs
fADC = 24 MHz
0.66
µs
TR(FT)
Fast trigger mode throughput rate(6)
fADC = 24 MHz
100
1200
ksps
1.
Guaranteed by design, not tested in production.
2.
Parameters in this table apply to devices with silicon Rev H and higher. Refer to Table 6 for device rev identification in OTP
memory and to Section 8: Device marking.
3.
Value obtained from conversions started by trigger in single mode
4.
All sucessive conversions in continuous and scan modes.
5.
Conversion started by trigger when automatic clock gated mode enabled. Fast trigger mode is available only in devices with
silicon Rev H and higher.
6.
Value obtained from conversions started by fast trigger in single mode
Table 47.
ADC conversion time (silicon Rev H)
Symbol
Parameter(1) (2)
Test
Conditions
Value
Unit
Min
Typ
Max
Table 48.
ADC conversion time (silicon Rev G and lower)
Symbol
Parameter(1) (2)
Test
Conditions
Value
Unit
Min
Typ
Max
tCONV(S] Single mode conversion time
2*16/fADC
3*16/fADC
µs
fADC = 24 MHz
1.33
2
TR(S)
Single mode throughput rate (3)
fADC = 24 MHz
500
ksps
tCONV(C] Continuous mode conversion time
(4)
1*16/fADC
µs
fADC = 24 MHz
0.66
µs
TR(C)
Continuous mode throughput rate
fADC = 24 MHz
1500
ksps
1.
Guaranteed by design, not tested in production.
2.
Parameters in this table apply to devices with silicon Rev G and lower. Refer to Table 6 for device rev identification in OTP
memory and to Section 8: Device marking.
3.
Value obtained on conversions started by trigger in single mode
4.
All sucessive conversions in continuous and scan modes.



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