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MIC5166 Datasheet(PDF) 14 Page - Microchip Technology

No. de pieza MIC5166
Descripción Electrónicos  3A High-Speed, Low-VIN DDR Terminator
PDF  36 Pages
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Fabricante Electrónico  MICROCHIP [Microchip Technology]
Página de inicio  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

MIC5166 Datasheet(HTML) 14 Page - Microchip Technology

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MIC5166
DS20006085B-page 14
 2018 - 2019 Microchip Technology Inc.
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
Pin Number
Pin Name
Description
1VREF
Reference Voltage. This output provides an output of the internal reference voltage
VDDQ/2. The VREF output is used to provide the reference voltage for the memory chip.
Connect a 1.0 µF capacitor to ground at this pin. This pin can sink and source 10 mA.
2BIAS
BIAS Supply Voltage. The BIAS supply is the power MOSFET gate drive supply volt-
age and the supply bus for the IC. The BIAS voltage must be greater than (VTT +
2.2V). A 1.0 µF ceramic capacitor from the BIAS pin to PGND must be placed next to
the IC.
3
AGND
Analog Ground. Internal signal ground for all low-power circuits.
4
VDDQ
Input Supply. VDDQ is connected to an internal precision divider that provides the
VREF. Connect a 4.7 µF capacitor to ground at this pin.
5PG
Power Good. This is an open-drain output that indicates when the output voltage is
within ±10% of the reference voltage. The PG flag is asserted typically with 65 µs delay
when the enable is set low or when the output goes outside ±10% the window thresh-
old.
6
SNS
Feedback. Input to the error amplifier.
7EN
Enable. Logic level control of the output. Logic high enables the MIC5166 and a logic
low shuts down the MIC5166. In the off state, supply current of the device is greatly
reduced (typically 0.2 µA). The EN pin should not be left open.
8PGND
Power Ground. Internal ground connection to the source of the internal, low-side drive,
N-channel MOSFET.
9VTT
Power Output. This is the connection to the source of the internal high-side N-channel
MOSFET and drain of the low-side N-channel MOSFET. This is a high-frequency,
high-power connection, therefore two 10 µF output capacitors must be placed as close
to the IC as possible.
10
VIN
High-Side N-Channel MOSFET Drain Connection. The VIN operating voltage range is
from 0.9V to 3.6V. An input capacitor between the VIN pin and the PGND is required
as close to the chip as possible.
EP
ePAD
Exposed Pad. Must be connected to a GND plane for best thermal performance.



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